Development of instrumentation and software for capacitance-voltage and current-voltage analysis of semiconductor and nanometer devices.

Products & Services

• • Mercury Probe
  • C-v Plotter
  • Resistivity Profile
  • Doping Profile
  • Oxide Charge
  • Permittivity
  • Dielectric Constant
  • Oxide Integrity
• • Lifetime
  • Dit
  • Surface Charge
  • Hot Chuck
  • Cryogenic Prober
  • I-v Plotter
  • Leakage Current
  • Dlcp

Web Result

MOS C-T (LIFETIME)

HOME ABOUT NEW PRODUCTS SERVICES REPS CONTACT LITERATURE TECH TIPS SITE MAP CALCULATORS MOS CAPACITANCE-TIME MEASUREMENT AND ANALYSIS The Capacitance-Time transient resulting from an MOS device pulsed into deep depletion reveals important information about bulk properties of the semiconductor and about damage or contaminants introduced during processing. The Zerbst analysis gives carrier generatio...

http://www.mdc4cv.com/CT.htm

PRODUCTION TVS

HOME ABOUT NEW PRODUCTS SERVICES REPS CONTACT LITERATURE TECH TIPS SITE MAP CALCULATORS PRODUCTION TRIANGULAR VOLTAGE SWEEP (TVS) OPTION In traditional TVS measurements, the operator must select the end points of the mobile ion peak to determine the area to analyze. Though the selection of these points is a simple matter for the operator, the required input precludes using this technique in a semi...

http://www.mdc4cv.com/TVS%20Prod.htm

MOS C-V

HOME ABOUT NEW PRODUCTS SERVICES REPS CONTACT LITERATURE TECH TIPS SITE MAP CALCULATORS MOS C-V MEASUREMENT AND ANALYSIS MOS capacitance-voltage measurement is one of the most common process monitoring diagnostics employed in device manufacturing. A vast amount of information can be derived from this simple test. The CSM/Win System gives the user a complete and powerful package for measuring MOS C...

http://www.mdc4cv.com/mosCV.htm

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